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Atomic level understanding of interfaces and defects

Research Achievements

Atomic level understanding of interfaces and defects

Research supporting our vision to obtain atomic level understanding of how interfaces and defects impact the local electronic structures and functionality of nanoscale electronic, spintronic, and organic/inorganic materials: Shih’s group found that a semiconductor quantum dot in a microcavity can be resonantly driven and its single-photon emission extracted. Such coherent control is necessary for future high-efficiency sources of indistinguishable single photons used for many applications. Stevenson’s group used spectroscopic elipsometry to show Mo defects in Tungsten oxide films enhance the insertion of lithium ions, important to understanding how atomic defects are used to generate new energy storage materials. Li’s group developed a new atomic force microscopy method where nanoparticles can simultaneously be manipulated with nanometer precision while being visualized, a new method key to creating structures to examine how nanoscale metallic structures enhance radiation fields.