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Broadband anti-reflection devices

Research Achievements

Broadband anti-reflection devices

Researchers at the Center for Terahertz Research successfully fabricated broadband anti-reflection devices that can reduce energy loss due to reflection in the frequency range from 0.2 THz to 3.15 THz. This broadband anti-reflection silicon device is made of arrays of micro-pyramid structures with 45-µm period. This device has a maximum 89% reduction in reflectivity in this frequency range. IGERT Trainee Yuting W. Chen in the Electrical, Computer and Systems Engineering Department, IGERT co-PI Professor X.-C. Zhang, and Dr. Pengyu Han in the Physics Department worked together on this research. This work entitled, "Tunable broadband antireflection structures for silicon at terahertz frequency", was published in Applied Physics Letters 94, 041106 on January 26, 2009 and later featured in the April issue of Nature Photonics.