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Terahertz response of field-effect transistors in saturation regime
Measured and calculated broadband THz response of high electron mobility transistors at 1.63 THz
Figure 1 Measured and calculated broadband THz response at 1.63 THz as a function of (a) the drain-to-source voltage for different gate-bias voltages, and (b) the drain current for 0.5 V gate-bias. The linear responsivity in the saturation regime appears clearly on the proper linear scale. The calculation (labeled Equation 4 with red symbols) from a phenomenological theory matches the THz responses in all regimes (linear and saturation) very well.
Credits: T.A. Elkhatib
